Tunnel-Barrier Rectifiers for Optical Nantennas

Mitrovic, IZ ORCID: 0000-0003-4816-8905, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Ralph, JF ORCID: 0000-0002-4946-9948, Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332, Luo, Z and Beeby, S (2016) Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72 (2). pp. 287-299. ISSN 1938-5862, 1938-6737

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Abstract

<jats:p>We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising double (Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>-Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) and triple (Ta<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>-Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>-Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) insulator configurations engineered to enhance low-voltage nonlinearity. The key rectifier properties, asymmetry, nonlinearity and responsivity have been assessed from current-voltage measurements. A superior low-voltage asymmetry (12 at 0.1 V) and responsivity (5 A/W at 0.2 V) for MIIIM rectifiers have been observed. The results demonstrate enhanced rectification by atomically multi-layering tunnel barriers in cascaded and non-cascaded MIIIM arrangements, for inclusion in optical nantennas.</jats:p>

Item Type:	Article
Uncontrolled Keywords:	40 Engineering, 4018 Nanotechnology
Depositing User:	Symplectic Admin
Date Deposited:	28 Apr 2016 13:28
Last Modified:	27 Mar 2025 19:35
DOI:	10.1149/07202.0287ecst
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3000980