Aging Benefits in Nanometer CMOS Designs



Rossi, Daniele, Tenentes, Vasileios, Yang, Sheng, Khursheed, Saqib and Al-Hashimi, Bashir M
(2017) Aging Benefits in Nanometer CMOS Designs. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 64 (3). 324 - 328.

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Item Type: Article
Uncontrolled Keywords: Bias temperature instability (BTI) aging, energy efficiency, leakage current, nanometer technology, static power
Depositing User: Symplectic Admin
Date Deposited: 03 Jun 2016 09:00
Last Modified: 17 Sep 2021 02:10
DOI: 10.1109/TCSII.2016.2561206
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3001494