Effects of annealing conditions on resistive switching characteristics of SnO<sub>x</sub> thin films



Jin, Jidong, Zhang, Jiawei, Kemal, Remzi E, Luo, Yi, Bao, Peng, Althobaiti, Mohammed, Hesp, David, Dhanak, Vinod R ORCID: 0000-0001-8053-654X, Zheng, Zhaoliang ORCID: 0000-0001-6741-6148, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905
et al (show 2 more authors) (2016) Effects of annealing conditions on resistive switching characteristics of SnO<sub>x</sub> thin films. JOURNAL OF ALLOYS AND COMPOUNDS, 673. pp. 54-59.

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Abstract

A resistive random-access memory based on an Al/SnOx/Pt structure is demonstrated. The SnOxthin films were prepared by DC sputtering at room temperature and different post-deposition thermal treatments carried out. We observe a significant improvement of bipolar resistive switching characteristics after annealing at 300 °C in nitrogen. The obtained memory devices show good stability with a relatively long retention time, exceeding 105s. The resistance ratio remains above 55 within the duration of 100 endurance cycles. An interface modified space-charge-limited-current model is proposed as a possible switching mechanism. The achieved characteristics of the resistive switching in SnOxfilms seem to be a promising candidate for nonvolatile memory applications.

Item Type: Article
Uncontrolled Keywords: Tin compounds, Resistive switching, Annealing
Depositing User: Symplectic Admin
Date Deposited: 31 Oct 2016 11:59
Last Modified: 18 Oct 2023 01:32
DOI: 10.1016/j.jallcom.2016.02.215
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3001864

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