Effects of annealing conditions on resistive switching characteristics of SnOx thin films

Collapse authors list.
Jin, Jidong, Zhang, Jiawei, Kemal, Remzi E, Luo, Yi, Bao, Peng, Althobaiti, Mohammed, Hesp, David, Dhanak, Vinod R, Zheng, Zhaoliang ORCID: 0000-0001-6741-6148, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 et al (show 2 more authors) , Hall, Steve ORCID: 0000-0001-8387-1036 and Song, Aimin (2016) Effects of annealing conditions on resistive switching characteristics of SnOx thin films. JOURNAL OF ALLOYS AND COMPOUNDS, 673. pp. 54-59.

Text JAC manuscript.docx - Author Accepted Manuscript Download (12MB)

Abstract

A resistive random-access memory based on an Al/SnOx/Pt structure is demonstrated. The SnOxthin films were prepared by DC sputtering at room temperature and different post-deposition thermal treatments carried out. We observe a significant improvement of bipolar resistive switching characteristics after annealing at 300 °C in nitrogen. The obtained memory devices show good stability with a relatively long retention time, exceeding 105s. The resistance ratio remains above 55 within the duration of 100 endurance cycles. An interface modified space-charge-limited-current model is proposed as a possible switching mechanism. The achieved characteristics of the resistive switching in SnOxfilms seem to be a promising candidate for nonvolatile memory applications.

Item Type:	Article
Uncontrolled Keywords:	Tin compounds, Resistive switching, Annealing
Depositing User:	Symplectic Admin
Date Deposited:	31 Oct 2016 11:59
Last Modified:	19 Jan 2023 07:35
DOI:	10.1016/j.jallcom.2016.02.215
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3001864

Available Versions of this Item

• Effects of annealing conditions on resistive switching characteristics of SnOx thin films. (deposited 26 Apr 2016 15:56)
  • Effects of annealing conditions on resistive switching characteristics of SnOx thin films. (deposited 31 Oct 2016 11:59) [Currently Displayed]