3-bit Multilevel cell switching in nitrogen doped Ta2O5 RRAM



Sedghi, N ORCID: 0000-0002-2004-6159, Brunell, I, Potter, R ORCID: 0000-0003-0896-4536, Hall, S ORCID: 0000-0001-8387-1036, Dawson, K ORCID: 0000-0003-3249-8328 and Chalker, PR ORCID: 0000-0002-2295-6332
(2016) 3-bit Multilevel cell switching in nitrogen doped Ta2O5 RRAM. In: 19th Workshop on Dielectrics in Microelectronics –WODIM, 2016-06-27 - 2016-06-30, Catania,Italy.

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MLC in N-doped Ta2O5 RRAM abstract.pdf - Accepted Version
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Item Type: Conference or Workshop Item
Depositing User: Symplectic Admin
Date Deposited: 17 Aug 2016 14:49
Last Modified: 28 Nov 2019 08:19
URI: http://livrepository.liverpool.ac.uk/id/eprint/3001880
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