Electronic Properties of CdS/CdTe Solar Cells as Influenced by a Buffer Layer

Fedorenko, YG ORCID: 0000-0002-7549-8857, Major, JD ORCID: 0000-0002-5554-1985, Pressman, A ORCID: 0000-0001-7916-6537, Phillips, L ORCID: 0000-0001-5181-1565 and Durose, K
(2015) Electronic Properties of CdS/CdTe Solar Cells as Influenced by a Buffer Layer. MRS Advances, 118 (16). 165705-. (Submitted)

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We considered modification of the defect density of states in CdTe as influenced by a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solar cells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted in the lower net ionized acceptor concentration and the energy shift of the dominant deep trap levels to the midgap of CdTe. The results clearly indicated that the same defect was responsible for the inefficient doping and the formation of recombination centers in CdTe. This observation can be explained taking into account the effect of strain on the electronic properties of the grain boundary interface states in polycrystalline CdTe. In the conditions of strain, interaction of chlorine with the grain boundary point defects can be altered.

Item Type: Article
Additional Information: This article gives an overview of results presented at 2015 MRS Fall Meeting
Uncontrolled Keywords: cond-mat.mtrl-sci, cond-mat.mtrl-sci
Depositing User: Symplectic Admin
Date Deposited: 16 Aug 2017 10:05
Last Modified: 15 Mar 2024 04:57
DOI: 10.1063/1.4934680
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3002209