Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant



Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332 and IEEE,
(2016) Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. .

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Vienna 2016_full paper-f.doc - Accepted Version

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Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: Zinc Oxide (ZnO), Niobium-doped ZnO (Nb: ZnO), thin film transistors (TFTs), atomic layered deposition (ALD), TFT modelling
Depositing User: Symplectic Admin
Date Deposited: 15 Feb 2017 11:05
Last Modified: 09 Jan 2021 08:21
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3002213