Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant

Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2016) Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016-1-25 - 2016-1-27.

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Abstract

Thin-film transistors (TFTs) have been fabricated using atomic layer deposition (ALD) Nb-doped ZnO (Nb:ZnO) for the active layer. The optical and electrical properties of the Nb:ZnO TFTs for Nb cycle percentage between 0 and 12.5 % were studied. The optical band gap is seen to increase with Nb content, where a cycle percentage of 12.5% gives an increase of 0.27 eV to 3.54 eV. The device with 3.8% Nb:ZnO exhibited the best TFT characteristics, with an On/Off ratio of 108, saturation mobility of 5.1 cm2/Vs, threshold voltage of 5.1 V and sub-Threshold swing of 0.51 V/dec. The characteristic temperature of the material, derived from a model based on an exponential density of states, indicates that the disorder within the material is reduced compared to the use of Mg doping.

Item Type:	Conference or Workshop Item (Unspecified)
Uncontrolled Keywords:	Zinc Oxide (ZnO), Niobium-doped ZnO (Nb: ZnO), thin film transistors (TFTs), atomic layered deposition (ALD), TFT modelling
Depositing User:	Symplectic Admin
Date Deposited:	15 Feb 2017 11:05
Last Modified:	07 Dec 2024 03:41
DOI:	10.1109/ulis.2016.7440044
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3002213