Band gap reduction in InNxSb1-x alloys: Optical absorption, k . P modeling, and density functional theory

Linhart, WM, Rajpalke, MK, Buckeridge, J, Murgatroyd, PAE, Bomphrey, JJ, Alaria, J ORCID: 0000-0001-5868-0318, Catlow, CRA, Scanlon, DO, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626 (2016) Band gap reduction in InNxSb1-x alloys: Optical absorption, k . P modeling, and density functional theory. APPLIED PHYSICS LETTERS, 109 (13). p. 132104.

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Official URL: http://dx.doi.org/10.1063/1.4963836

Abstract

<jats:p>Using infrared absorption, the room temperature band gap of InSb is found to reduce from 174 (7.1 μm) to 85 meV (14.6 μm) upon incorporation of up to 1.13% N, a reduction of ∼79 meV/%N. The experimentally observed band gap reduction in molecular-beam epitaxial InNSb thin films is reproduced by a five band k · P band anticrossing model incorporating a nitrogen level, EN, 0.75 eV above the valence band maximum of the host InSb and an interaction coupling matrix element between the host conduction band and the N level of β = 1.80 eV. This observation is consistent with the presented results from hybrid density functional theory.</jats:p>

Item Type:	Article
Depositing User:	Symplectic Admin
Date Deposited:	04 Oct 2016 09:16
Last Modified:	12 Oct 2023 05:48
DOI:	10.1063/1.4963836
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3003535