Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements



Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017) Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1). 673 - 682.

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Item Type: Article
Uncontrolled Keywords: ALD, gamma irradiation, hafnium oxide, low-dose-rate, oxide trapped charges, pulse CV
Depositing User: Symplectic Admin
Date Deposited: 12 Dec 2016 15:28
Last Modified: 21 Jan 2021 08:10
DOI: 10.1109/TNS.2016.2633549
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3004820