Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements

Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332 (2017) Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1). pp. 673-682.

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Official URL: http://dx.doi.org/10.1109/tns.2016.2633549

Abstract

This paper reports on the low-dose-rate radiation response of Al-HfO2/SiO2-Si MOS devices, where the gate dielectric was formed by atomic layer deposition with 4.7 nm equivalent oxide thickness. The degradation of the devices was characterized by a pulse capacitance-voltage (CV) and on-site radiation response techniques under continuous gamma (γ) ray exposure at a relatively low-dose-rate of 0.116 rad(HfO2)/s. A significant variation of the flat-band voltage shift of up to ± 1.1 V under positive and negative biased irradiation, with the total dose of up to 40 krad (HfO2) and the electric field of ∼0.5 MV/cm, has been measured on the HfO2-based MOS devices using the proposed techniques, not apparent by conventional CV measurements. The large flat-b and voltage shift is mainly attributed to the radiation-induced oxide trapped charges, which are not readily compensated by bias-induced charges produced over the measurement timescales of less than 5 ms. Analysis of the experimental results suggest that both hole and electron trapping can dominate the radiation response performance of the HfO2-based MOS devices depending on the applied bias. No distinct loop width variation has been found with irradiation in all cases.

Item Type:	Article
Uncontrolled Keywords:	ALD, gamma irradiation, hafnium oxide, low-dose-rate, oxide trapped charges, pulse CV
Depositing User:	Symplectic Admin
Date Deposited:	12 Dec 2016 15:28
Last Modified:	19 Jan 2023 07:24
DOI:	10.1109/TNS.2016.2633549
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3004820