The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver



Golrokhi, Z, Marshall, PA, Romani, S, Rushworth, S, Chalker, PR ORCID: 0000-0002-2295-6332 and Potter, RJ ORCID: 0000-0003-0896-4536
(2017) The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver. Applied Surface Science, 399. 123 - 131.

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Abstract

Ultra-thin conformal silver films are the focus of development for applications such as anti-microbial surfaces, optical components and electronic devices. In this study, metallic silver films have been deposited using direct liquid injection thermal atomic layer deposition (ALD) using (hfac)Ag(1,5-COD) ((hexafluoroacetylacetonato)silver(I)(1,5-cyclooctadiene)) as the metal source and tertiary butyl hydrazine (TBH) as a co-reactant. The process provides a 23 °C wide ‘self-limiting’ ALD temperature window between 105 and 128 °C, which is significantly wider than is achievable using alcohol as a co-reactant. A mass deposition rate of ∼20 ng/cm2/cycle (∼0.18 Å/cycle) is observed under self-limiting growth conditions. The resulting films are crystalline metallic silver with a near planar film-like morphology which are electrically conductive. By extending the temperature range of the ALD window by the use of TBH as a co-reactant, it is envisaged that the process will be exploitable in a range of new low temperature applications.

Item Type: Article
Uncontrolled Keywords: Atomic layer deposition, Self limiting, Silver thin films, Tertiary butyl hydrazine
Depositing User: Symplectic Admin
Date Deposited: 11 Jan 2017 08:27
Last Modified: 09 Jan 2021 07:47
DOI: 10.1016/j.apsusc.2016.11.192
Open Access URL: http://dx.doi.org/10.1016/j.apsusc.2016.11.192
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3005163