Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates



Lu, Qifeng, Mu, Yifei, Roberts, Joseph W, Althobaiti, Mohammed, Dhanak, Vinod R, Wu, Jingjin, Zhao, Chun, Zhao, Ce Zhou, Zhang, Qian, Yang, Li
et al (show 3 more authors) (2015) Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates. MATERIALS, 8 (12). 8169 - 8182.

[img] Text
materials-final version.doc - Accepted Version

Download (1MB)
Item Type: Article
Uncontrolled Keywords: Ge substrate, titanium-doped hafnium oxide, XPS, XRD, AFM
Depositing User: Symplectic Admin
Date Deposited: 06 Feb 2017 09:13
Last Modified: 21 Apr 2021 18:35
DOI: 10.3390/ma8125454
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3005571