Lu, Qifeng, Mu, Yifei, Roberts, Joseph W, Althobaiti, Mohammed, Dhanak, Vinod R, Wu, Jingjin, Zhao, Chun, Zhao, Ce Zhou, Zhang, Qian, Yang, Li et al (show 3 more authors)
(2015)
Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates.
MATERIALS, 8 (12).
8169 - 8182.
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materials-final version.doc - Accepted Version Download (1MB) |
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Ge substrate, titanium-doped hafnium oxide, XPS, XRD, AFM |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 06 Feb 2017 09:13 |
| Last Modified: | 02 Sep 2022 23:10 |
| DOI: | 10.3390/ma8125454 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3005571 |
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