Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates


Lu, Qifeng, Mu, Yifei, Roberts, Joseph W, Althobaiti, Mohammed, Dhanak, Vinod R, Wu, Jingjin, Zhao, Chun, Zhao, Ce Zhou, Zhang, Qian, Yang, Li et al (show 3 more authors) (2015) Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates. MATERIALS, 8 (12). 8169 - 8182.

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Item Type: Article
Uncontrolled Keywords: Ge substrate, titanium-doped hafnium oxide, XPS, XRD, AFM
Depositing User: Symplectic Admin
Date Deposited: 06 Feb 2017 09:13
Last Modified: 19 Jan 2022 08:33
DOI: 10.3390/ma8125454
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3005571
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