(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films

Chalker, Paul Raymond ORCID: 0000-0002-2295-6332, Marshall, Paul A, Dawson, Karl ORCID: 0000-0003-3249-8328, Sutcliffe, Christopher J, Brunell, Ian F, Sedghi, Naser ORCID: 0000-0002-2004-6159, Hall, Stephen ORCID: 0000-0001-8387-1036 and Potter, Richard J ORCID: 0000-0003-0896-4536 (2015) (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Transactions, 69 (7). 139 - 145.

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Abstract

<jats:p>Conventional atomic layer deposition (ALD) is a thermo-chemical process where co-reagents are sequentially pulsed in cycles onto a heated substrate. As an alternative to substrate heating, various forms of other “non-thermal” ALD processes are being investigated. Herein, the photochemical atomic layer deposition of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and TiO<jats:sub>2</jats:sub> thin films at 60°C is reported using a shuttered vacuum ultraviolet light source to excite molecular oxygen as a co-reagent with the metal precursors. The growth mechanisms using trimethyl aluminium and titanium tetraisopropoxide precursors, are investigated using in-situ quartz crystal microbalance and post-deposition ellipsometric measurements. The photochemical ALD Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films exhibit different capacitance equivalent thicknesses for irradiated and masked regions respectively, even after post-deposition annealing. The photochemical ALD titania films are amorphous and when incorporated into Pt / TiO<jats:sub>2</jats:sub> / Pt metal - insulator - metal structures, the titania exhibits a resistive switching behavior.</jats:p>

Item Type:	Article
Depositing User:	Symplectic Admin
Date Deposited:	09 Feb 2017 11:43
Last Modified:	22 Jul 2022 23:10
DOI:	10.1149/06907.0139ecst
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3005663