Chalker, Paul Raymond, Marshall, Paul A, Dawson, Karl, Sutcliffe, Christopher J, Brunell, Ian F, Sedghi, Naser, Hall, Stephen and Potter, Richard J
(2015)
(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films.
ECS Transactions, 69 (7).
pp. 139-145.
Text
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Abstract
<jats:p>Conventional atomic layer deposition (ALD) is a thermo-chemical process where co-reagents are sequentially pulsed in cycles onto a heated substrate. As an alternative to substrate heating, various forms of other “non-thermal” ALD processes are being investigated. Herein, the photochemical atomic layer deposition of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and TiO<jats:sub>2</jats:sub> thin films at 60°C is reported using a shuttered vacuum ultraviolet light source to excite molecular oxygen as a co-reagent with the metal precursors. The growth mechanisms using trimethyl aluminium and titanium tetraisopropoxide precursors, are investigated using in-situ quartz crystal microbalance and post-deposition ellipsometric measurements. The photochemical ALD Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films exhibit different capacitance equivalent thicknesses for irradiated and masked regions respectively, even after post-deposition annealing. The photochemical ALD titania films are amorphous and when incorporated into Pt / TiO<jats:sub>2</jats:sub> / Pt metal - insulator - metal structures, the titania exhibits a resistive switching behavior.</jats:p>
Item Type: | Article |
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Uncontrolled Keywords: | 40 Engineering, 4018 Nanotechnology |
Depositing User: | Symplectic Admin |
Date Deposited: | 09 Feb 2017 11:43 |
Last Modified: | 20 Jun 2024 19:07 |
DOI: | 10.1149/06907.0139ecst |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3005663 |