Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications


Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 2 more authors) (2017) Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications In: 20th Conference on "Insulating Films on Semiconductors", 2017-6-27 - 2017-6-30, Potsdam, Germany.

[thumbnail of Sawangsri et al-AbsINFOS2017-f.pdf] Text
Sawangsri et al-AbsINFOS2017-f.pdf - Author Accepted Manuscript
Download (1MB)

Abstract

The band alignment of Ta<inf>2</inf>O<inf>5</inf>/GaN has been measured experimentally. The HCl cleaning has been found to be effective in removing oxygen from the GaN surface and was used prior to deposition of the Ta<inf>2</inf>O<inf>5</inf> films by radio frequency magnetron sputtering. Variable angle spectroscopic ellipsometry was performed to measure the thickness, optical constants and band gap of GaN and Ta<inf>2</inf>O<inf>5</inf>/GaN samples. The valence band offset of Ta<inf>2</inf>O<inf>5</inf>/GaN was measured by X-ray photoelectron spectroscopy using Kraut's method, and found to be 0.70 ± 0.25 eV. The results provide experimental evidence of an earlier theoretical study of higher effective barrier for holes than for electrons in the Ta<inf>2</inf>O<inf>5</inf>/GaN material system.

Item Type: Conference Item (Unspecified)
Uncontrolled Keywords: GaN, Ta2O5, Band alignment
Depositing User: Symplectic Admin
Date Deposited: 10 Feb 2017 15:37
Last Modified: 24 Jan 2026 01:04
DOI: 10.1016/j.mee.2017.04.010
Related Websites:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3005750
Disclaimer: The University of Liverpool is not responsible for content contained on other websites from links within repository metadata. Please contact us if you notice anything that appears incorrect or inappropriate.
Altmetric
CORE (COnnecting REpositories)