Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements

Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements. In: 20th Conference on "Insulating Films on Semiconductors", 2017-6-27 - 2017-6-30, Potsdam, Germany.

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Abstract

The sub-band gap density of states (DOS) of Nb doped ZnO thin film transistors were extracted using a multi-frequency capacitance-voltage (C-V) method. The results can be represented by a two-term exponential DOS, representing the tail and deep states. The parameters for the tail and deep states are N<inf>tail</inf> = 1.6 × 10¹⁹ cm^− 3, T<inf>tail</inf> = 540 K, N<inf>deep</inf> = 6.5 × 10¹⁶ cm^− 3 and T<inf>deep</inf> = 4058 K respectively. Furthermore, the DOS from C-V provides a good fit with current-voltage characteristics, using the multiple trap and release model.

Item Type:	Conference Item (Unspecified)
Uncontrolled Keywords:	C-V measurements, Sub-band gap density of states, Niobium-doped ZnO, Thin film transistors, Multiple trap and release model
Depositing User:	Symplectic Admin
Date Deposited:	13 Feb 2017 10:30
Last Modified:	05 Jun 2025 14:11
DOI:	10.1016/j.mee.2017.05.043
Related Websites:	Author
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3005776