Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements


Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. .

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A Shaw et al abstract-infos2017.pdf - Accepted Version
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Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: C-V measurements, Sub-band gap density of states, Niobium-doped ZnO, Thin film transistors, Multiple trap and release model
Depositing User: Symplectic Admin
Date Deposited: 13 Feb 2017 10:30
Last Modified: 09 Jan 2021 07:42
DOI: 10.1016/j.mee.2017.05.043
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3005776
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