Shaw, A, Gao, C, Jin, JD, Mitrovic, IZ 
ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036
(2015)
Characterisation and Modelling of Mg Doped ZnO TFTs.
In: 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015-6-29 - 2015-7-2.
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A Shaw PRIME final.pdf - Author Accepted Manuscript Download (257kB) |
Abstract
The ever-increasing use of ZnO TFTs requires further in depth analysis and the need for a suitable model to obtain the true transport mechanisms. This paper explores the modelling of MgZnO TFTs using a defect state model based on multiple trapping and release and successfully validates the model with the fitting parameters. Namely, flat band voltage, characteristic temperature associated with the defect distribution, number of traps and conductivity of the ZnO film.
| Item Type: | Conference or Workshop Item (Unspecified) |
|---|---|
| Uncontrolled Keywords: | Zinc oxide (ZnO), Magnesium doped Zinc Oxide (MgZnO), atomic layered deposition (ALD), thin film transistor (TFT), TFT modelling |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 15 Feb 2017 11:07 |
| Last Modified: | 19 Jan 2023 07:19 |
| DOI: | 10.1109/prime.2015.7251357 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3005787 |
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