Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics



Zhuang, QD, Alradhi, H, Jin, ZM, Chen, XR, Shao, J, Chen, X, Sanchez, Ana M, Cao, YC, Liu, JY, Yates, P
et al (show 2 more authors) (2017) Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics. NANOTECHNOLOGY, 28 (10).

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Item Type: Article
Uncontrolled Keywords: nanowire, InAsSb, photoluminescence, infrared, molecular beam epitaxy
Depositing User: Symplectic Admin
Date Deposited: 07 Mar 2017 08:38
Last Modified: 10 Oct 2019 07:16
DOI: 10.1088/1361-6528/aa59c5
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URI: http://livrepository.liverpool.ac.uk/id/eprint/3006230
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