Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics


Zhuang, QD, Alradhi, H, Jin, ZM, Chen, XR, Shao, J, Chen, X, Sanchez, Ana M, Cao, YC, Liu, JY, Yates, P et al (show 2 more authors) (2017) Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics. NANOTECHNOLOGY, 28 (10).

[img] Text
2017_Zhuang_Optically efficient InAsSb Nanotechnology_proof.pdf - Accepted Version
Download (2MB)
Item Type: Article
Uncontrolled Keywords: nanowire, InAsSb, photoluminescence, infrared, molecular beam epitaxy
Depositing User: Symplectic Admin
Date Deposited: 07 Mar 2017 08:38
Last Modified: 15 Apr 2021 07:29
DOI: 10.1088/1361-6528/aa59c5
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3006230
Dimensions
Altmetric
CORE (COnnecting REpositories)