Results of the 2015 testbeam of a 180nm AMS High-Voltage CMOS sensor prototype


Benoit, M, de Mendizabal, J Bilbao, Casse, G ORCID: 0000-0002-8516-237X, Chen, H, Chen, K, Di Bello, FA, Ferrere, D, Golling, T, Gonzalez-Sevilla, S, Iacobucci, G et al (show 15 more authors) (2016) Results of the 2015 testbeam of a 180nm AMS High-Voltage CMOS sensor prototype JOURNAL OF INSTRUMENTATION, 11 (7). p07019-p07019. ISSN 1748-0221, 1748-0221

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Abstract

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Item Type: Article
Additional Information: 16 pages, 14 figures
Uncontrolled Keywords: Electronic detector readout concepts (solid-state), Particle tracking detectors (Solid-state detectors), Si microstrip and pad detectors, Solid state detectors
Depositing User: Symplectic Admin
Date Deposited: 27 Mar 2017 10:19
Last Modified: 16 Jun 2026 16:35
DOI: 10.1088/1748-0221/11/07/P07019
Open Access URL: http://iopscience.iop.org/article/10.1088/1748-022...
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3006649
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