Indium-incorporation enhancement of photoluminescence properties of Ga(In) SbBi alloys



Linhart, WM, Gladysiewicz, M, Kopaczek, J, Rajpalke, MK, Ashwin, MJ ORCID: 0000-0001-8657-8097, Veal, TD ORCID: 0000-0002-0610-5626 and Kudrawiec, R
(2017) Indium-incorporation enhancement of photoluminescence properties of Ga(In) SbBi alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 50 (37). p. 375102.

This is the latest version of this item.

[img] Text
GaInSbBi_preprint.pdf - Submitted version

Download (319kB)
[img] Text
Linhart_GaInSbBi_JPD_author_accepted.pdf - Author Accepted Manuscript

Download (1MB)

Abstract

Ga(In)SbBi alloys grown by molecular-beam epitaxy on GaSb substrates with up to 5.5% In and 1.8% Bi were studied by temperature- and power-dependent photoluminescence (PL) and compared to previous photoreflectance (PR) results. High energy and low energy PL peaks were observed and attributed respectively to Ga(In)SbBi bandgap-related emission and native acceptor-related emission. For GaSbBi below 100 K, the HE peak is at slightly lower energy than the bandgap determined from PR, indicating carrier localization. This phenomenon is significantly weaker in PL of GaInSbBi alloys, suggesting that the presence of indium improves the optical quality over that of GaSbBi.

Item Type: Article
Uncontrolled Keywords: GaSbBi, GaInSbBi, mid infrared, photoluminescence, dilute bismides
Depositing User: Symplectic Admin
Date Deposited: 11 Jul 2017 09:53
Last Modified: 19 Jan 2023 07:00
DOI: 10.1088/1361-6463/aa7e64
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3008398

Available Versions of this Item