Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films

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Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 1 more authors) and Chalker, Paul R ORCID: 0000-0002-2295-6332 (2017) Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12). 2913 - 2921.

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