Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen
ORCID: 0000-0002-2144-8459 et al (show 1 more authors)
(2017)
Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12).
2913 - 2921.
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Text
Total Dose Effects and Bias Instabilities of (NH4)2S Passivated Ge MOS Capacitors with HfxZr1-xOy Thin Films.pdf - Accepted Version Download (1MB) |
Item Type: | Article |
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Uncontrolled Keywords: | HfxZr1-xOy, germanium, interface traps, oxide trapped charges, total dose effect |
Depositing User: | Symplectic Admin |
Date Deposited: | 15 Nov 2017 13:55 |
Last Modified: | 17 Jan 2021 20:10 |
DOI: | 10.1109/TNS.2017.2768566 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3012214 |
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