Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films



Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459
et al (show 1 more authors) (2017) Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12). 2913 - 2921.

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Total Dose Effects and Bias Instabilities of (NH4)2S Passivated Ge MOS Capacitors with HfxZr1-xOy Thin Films.pdf - Accepted Version

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Item Type: Article
Uncontrolled Keywords: HfxZr1-xOy, germanium, interface traps, oxide trapped charges, total dose effect
Depositing User: Symplectic Admin
Date Deposited: 15 Nov 2017 13:55
Last Modified: 17 Jan 2021 20:10
DOI: 10.1109/TNS.2017.2768566
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3012214