Recycled IC Detection through Aging Sensor

Rossi, D, Tenentes, V, Khursheed, S and Reddy, S (2018) Recycled IC Detection through Aging Sensor. In: European Test Symposium, 2018-5-28 - 2018-6-1.

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Abstract

In this paper, we propose a novel technique to detect recycled ICs via an on-chip, coarse-grained aging sensor, which can be applied to low-power circuits featuring power gating. The sensor detects the increase in the power-rail discharge time of power-gated circuits, when the circuit enters the sleep condition. Through HSPICE simulations, we prove that power network discharge time (τdV) is extremely sensitive to the age of the circuit. Indeed, after only 1 month of operation, τdV increases by more than 3X and, after 1 year, its increase exceeds 7X. Our technique enables the detection of recycled ICs with a very high confidence and is a considerably more sensitive indicator of an aged device that alternative solutions relying on fine-grained performance degradation sensors.

Item Type:	Conference or Workshop Item (Unspecified)
Uncontrolled Keywords:	Aging
Depositing User:	Symplectic Admin
Date Deposited:	18 Apr 2018 14:45
Last Modified:	16 Mar 2024 22:02
DOI:	10.1109/ets.2018.8400713
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3020325