The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique



Chai, Zheng, Zhang, Weidong, Freitas, Pedro, Hatem, Firas, Zhang, Jian Fu, Marsland, John, Govoreanu, Bogdan, Goux, Ludovic, Kar, Gouri Sankar, Hall, Steve ORCID: 0000-0001-8387-1036
et al (show 2 more authors) (2018) The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique. IEEE ELECTRON DEVICE LETTERS, 39 (7). 955 - 958.

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EDL-2018-04-0624_Ta2O5_over-reset_final.pdf - Accepted Version

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Item Type: Article
Uncontrolled Keywords: Resistive switching, RRAM, over-reset, defect profile, random telegraph noise, Ta2O5, HfO2
Depositing User: Symplectic Admin
Date Deposited: 02 May 2018 15:20
Last Modified: 17 Jan 2021 01:10
DOI: 10.1109/LED.2018.2833149
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3020849