The Over-Reset Phenomenon in Ta<sub>2</sub>O<sub>5</sub> RRAM Device Investigated by the RTN-Based Defect Probing Technique


Chai, Zheng, Zhang, Weidong, Freitas, Pedro, Hatem, Firas, Zhang, Jian Fu, Marsland, John, Govoreanu, Bogdan, Goux, Ludovic, Kar, Gouri Sankar, Hall, Steve ORCID: 0000-0001-8387-1036 et al (show 2 more authors) (2018) The Over-Reset Phenomenon in Ta<sub>2</sub>O<sub>5</sub> RRAM Device Investigated by the RTN-Based Defect Probing Technique. IEEE ELECTRON DEVICE LETTERS, 39 (7). pp. 955-958. ISSN 0741-3106, 1558-0563

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Abstract

Despite the tremendous efforts in the past decade devoted to the development of filamentary resistive-switching devices (RRAM), there is still a lack of in-depth understanding of its over-reset phenomenon. At higher reset stop voltages that exceed a certain threshold, the resistance at high resistance state reduces, leading to an irrecoverable window reduction. The over-reset phenomenon limits the maximum resistance window that can be achieved by using a higher V<inf>reset</inf>, which also degrades its potential in applications such as multi-level memory and neuromorphic synapses. In this letter, the over-reset is investigated by cyclic reset operations with incremental stop voltages, and is explained by defect generation in the filament constriction region of Ta<inf>2</inf>O<inf>5</inf> RRAM devices. This is supported by the statistical spatial defects profile obtained from the random telegraph noise based defect probing technique. The impact of forming compliance current on the over-reset is also evaluated.

Item Type: Article
Uncontrolled Keywords: Resistive switching, RRAM, over-reset, defect profile, random telegraph noise, Ta2O5, HfO2
Depositing User: Symplectic Admin
Date Deposited: 02 May 2018 15:20
Last Modified: 17 Jun 2025 07:01
DOI: 10.1109/LED.2018.2833149
Related Websites:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3020849
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