The Over-Reset Phenomenon in Ta<sub>2</sub>O<sub>5</sub> RRAM Device Investigated by the RTN-Based Defect Probing Technique


Chai, Zheng, Zhang, Weidong, Freitas, Pedro, Hatem, Firas, Zhang, Jian Fu, Marsland, John, Govoreanu, Bogdan, Goux, Ludovic, Kar, Gouri Sankar, Hall, Steve ORCID: 0000-0001-8387-1036 et al (show 2 more authors) (2018) The Over-Reset Phenomenon in Ta<sub>2</sub>O<sub>5</sub> RRAM Device Investigated by the RTN-Based Defect Probing Technique. IEEE ELECTRON DEVICE LETTERS, 39 (7). pp. 955-958.

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Abstract

Despite the tremendous efforts in the past decade devoted to the development of filamentary resistive-switching devices (RRAM), there is still a lack of in-depth understanding of its over-reset phenomenon. At higher reset stop voltages that exceed a certain threshold, the resistance at high resistance state reduces, leading to an irrecoverable window reduction. The over-reset phenomenon limits the maximum resistance window that can be achieved by using a higher Vreset, which also degrades its potential in applications such as multi-level memory and neuromorphic synapses. In this letter, the over-reset is investigated by cyclic reset operations with incremental stop voltages, and is explained by defect generation in the filament constriction region of Ta2O5 RRAM devices. This is supported by the statistical spatial defects profile obtained from the random telegraph noise based defect probing technique. The impact of forming compliance current on the over-reset is also evaluated.

Item Type: Article
Uncontrolled Keywords: Resistive switching, RRAM, over-reset, defect profile, random telegraph noise, Ta2O5, HfO2
Depositing User: Symplectic Admin
Date Deposited: 02 May 2018 15:20
Last Modified: 13 Oct 2023 19:09
DOI: 10.1109/LED.2018.2833149
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3020849
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