Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Films

Mattinen, Miika, King, Peter J, Khriachtchev, Leonid, Meinander, Kristoffer, Gibbon, James T ORCID: 0000-0003-1548-0791, Dhanak, Vin R, Räisänen, Jyrki, Ritala, Mikko and Leskelä, Markku
(2018) Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Films. SMALL, 14 (21).

[img] Text
ALD of 2D SnS2._submitted_forshare.pdf - Submitted Version

Download (914kB)


Semiconducting 2D materials, such as SnS2, hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few‐layer SnS2 films has remained a great challenge. Herein, continuous wafer‐scale 2D SnS2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low‐temperature (250 °C) postdeposition annealing. Uniform coating of large‐area and 3D substrates is demonstrated owing to the unique self‐limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T‐type crystal structure and composition, smoothness, and continuity of the SnS2 films. A two‐stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high‐quality SnS2 films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.

Item Type: Article
Uncontrolled Keywords: 2d materials, atomic layer deposition, semiconductors, SnS2, thin films
Depositing User: Symplectic Admin
Date Deposited: 11 May 2018 09:53
Last Modified: 15 Oct 2021 05:13
DOI: 10.1002/smll.201800547
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3020919