Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs



Zaidi, ZH, Lee, KB, Roberts, JW, Guiney, I, Qian, H, Jiang, S, Cheong, JS, Li, P, Wallis, DJ, Humphreys, CJ
et al (show 2 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. JOURNAL OF APPLIED PHYSICS, 123 (18).

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Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 15 May 2018 13:40
Last Modified: 09 Jan 2021 05:30
DOI: 10.1063/1.5027822
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3021322