Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

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Zaidi, ZH, Lee, KB, Roberts, JW, Guiney, I, Qian, H, Jiang, S, Cheong, JS, Li, P, Wallis, DJ, Humphreys, CJ et al (show 2 more authors) , Chalker, PR ORCID: 0000-0002-2295-6332 and Houston, PA (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. JOURNAL OF APPLIED PHYSICS, 123 (18).

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