Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance

Birkett, M ORCID: 0000-0002-6076-6820, Linhart, W, Stoner, J, Phillips, LJ ORCID: 0000-0001-5181-1565, Durose, K ORCID: 0000-0003-1183-3211, Alaria, J ORCID: 0000-0001-5868-0318, Major, JD ORCID: 0000-0002-5554-1985, Kudrawiec, R and Veal, TD ORCID: 0000-0002-0610-5626
(2018) Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance. APL Materials, 6 (8).

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The candidate photovoltaic absorber antimony selenide Sb2Se3 has been prepared by the commercially attractive close-space sublimation method. Structure, composition, and morphology are studied by x-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. Large rhubarb-like grains favorable for photovoltaics naturally develop. The temperature-dependence of the direct band gap is determined by photoreflectance between 20 and 320 K and is well described by the Varshni and Bose–Einstein relations, blue-shifting with decreasing temperature from 1.18 to 1.32 eV. The 300 K band gap matches that seen in high quality single-crystal material, while the 0 K gap is consistent with that found in first-principles calculations, further supporting the array of beneficial photovoltaic properties indicated for this material.

Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 25 May 2018 15:28
Last Modified: 31 Jul 2022 12:19
DOI: 10.1063/1.5027157
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