Growth and Characterization of Sb<sub>2</sub>Se<sub>3</sub> Single Crystals for Fundamental Studies

Hobson, Theodore DC ORCID: 0000-0002-0013-360X, Hutter, Oliver S ORCID: 0000-0002-8838-8956, Birkett, Max ORCID: 0000-0002-6076-6820, Veal, Tim D ORCID: 0000-0002-0610-5626 and Durose, Ken ORCID: 0000-0003-1183-3211
(2018) Growth and Characterization of Sb<sub>2</sub>Se<sub>3</sub> Single Crystals for Fundamental Studies. In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018-6-10 - 2018-6-15, Waikoloa, Hawaii.

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Three methods of growing bulk crystalline samples of Sb2 Se3 to provide material for basic studies have been investigated and preliminary characterization is reported. These growth methods were: A) melt-growth, similar to vertical Bridgman, b) dynamic vapor transport over a temperature gradient (Piper-Polich method) and c) a static vapor method in which the source material is transported in nearly iso-thermal conditions. The melt-growth method produced the largest single crystals (up to 4 mm diameter), while the vapor methods both yielded polycrystalline boules with mm-sized grains. Powder XRD confirmed the boules to comprise orthorhombic Sb2 Se3, having lattice parameters a = 11.7808 Å b = 3.9767 Å and c = 11.6311 Å. Cleavage facets were parallel to (100). Raman peaks at 191 (A g and 211 cm -1 were excited anisotropically. FTIR reflectance features showed some sensitivity to s- and ppolarization.

Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: antimony selenide, crystal growth, Raman spectroscopy, single crystal, X-ray diffraction
Depositing User: Symplectic Admin
Date Deposited: 27 Jul 2018 14:56
Last Modified: 15 Mar 2024 07:13
DOI: 10.1109/pvsc.2018.8547622
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