Transparent Ta doped SnO<sub>2</sub> films deposited by RF co-sputtering

Featherstone, TJ, Swallow, JEN, Major, JD ORCID: 0000-0002-5554-1985, Durose, K ORCID: 0000-0003-1183-3211 and Veal, TD ORCID: 0000-0002-0610-5626
(2018) Transparent Ta doped SnO<sub>2</sub> films deposited by RF co-sputtering. In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018-6-10 - 2018-6-15, Waikoloa, Hawaii.

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Tantalum doped tin oxide (TaTO) has the potential to surpass the more commonly used transparent electrode, fluorine doped tin oxide (FTO), in terms of electrical conductivity as it avoids the self-compensating F interstitial defects that limit FTO. However, high mobility TaTO has only been deposited by pulsed laser deposition (PLD), a slow, expensive and non-scalable technique. In this work, TaTO was deposited by RF co-sputtering of SnO 2 and Ta 2 O 5 . A range of sputtering parameters were investigated varying the tantalum content and substrate temperature. Resistivities of 8.5×10 -3 Ωcm were achieved under the best conditions, corresponding to a carrier concentration of 4.4 × 10 19 cm -3 and Hall mobility of 16.6 cm 2 V -1 s -1 along with transmission of >75% across the visible and near infrared was achieved. X-ray diffraction patterns informed that the limitation of the co-sputtering deposition method arose from uneven distribution of dopant throughout the films.

Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: Conductive films, Doping, Sputtering, Tin Compounds
Depositing User: Symplectic Admin
Date Deposited: 27 Jul 2018 15:18
Last Modified: 04 Jun 2024 07:33
DOI: 10.1109/pvsc.2018.8547755
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