Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR ORCID: 0000-0001-8053-654X
(2018)
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge.
AIP Advances, 8 (6).
065011-065011.
Text
Gibbon et al-AIP Advances - accepted manuscript version.pdf - Author Accepted Manuscript Download (486kB) |
Abstract
<jats:p>Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the Kraut Method. The valence band offsets were determined to be 3.49± 0.08 eV and 3.47± 0.08 eV with Si(111) and Si(100) respectively and 3.51eV± 0.08 eV with Ge(100). Inverse photoemission spectroscopy (IPES) was used to investigate the conduction band of a thick Ga2O3 film and the band gap of the film was determined to be 4.63±0.14 eV. The conduction band offsets were found to be 0.03 eV and 0.05eV with Si(111) and Si(100) respectively, and 0.45eV with Ge(100). The results indicate that the heterojunctions of Ga2O3 with Si(100), Si(111) and Ge(100) are all type I heterojunctions.</jats:p>
Item Type: | Article |
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Depositing User: | Symplectic Admin |
Date Deposited: | 30 Jul 2018 13:04 |
Last Modified: | 10 Jul 2023 10:01 |
DOI: | 10.1063/1.5034459 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3024369 |