Investigation of Tm(2)O(3)( )as a Gate Dielectric for Ge MOS Devices



Zurauskaite, L, Jones, L ORCID: 0000-0002-4654-3882, Dhanak, VR, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hellstrom, PE and Ostling, M
(2018) Investigation of Tm(2)O(3)( )as a Gate Dielectric for Ge MOS Devices. SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8, 86 (7). 67 - 73.

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Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 23 Jan 2019 15:55
Last Modified: 20 Aug 2022 11:34
DOI: 10.1149/08607.0067ecst
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3030700