Development of a silicon bulk radiation damage model for Sentaurus TCAD



Folkestad, A, Akiba, K, van Beuzekom, M, Buchanan, E, Collins, P, Dall'Occo, E, Di Canto, A, Evans, T, Lima, V Franco, Garcia Pardinas, J
et al (show 4 more authors) (2017) Development of a silicon bulk radiation damage model for Sentaurus TCAD. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 874. 94 - 102.

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Item Type: Article
Uncontrolled Keywords: Silicon sensor, Silicon pixel detector, Radiation damage, TCAD, Device simulation
Depositing User: Symplectic Admin
Date Deposited: 11 Feb 2019 13:47
Last Modified: 23 Nov 2020 09:18
DOI: 10.1016/j.nima.2017.08.042
Open Access URL: https://doi.org/10.1016/j.nima.2017.08.042
Related URLs:
URI: http://livrepository.liverpool.ac.uk/id/eprint/3032651