Folkestad, A, Akiba, K, van Beuzekom, M, Buchanan, E, Collins, P, Dall'Occo, E, Di Canto, A, Evans, T, Lima, V Franco ORCID: 0000-0002-3761-209X, Garcia Pardinas, J et al (show 4 more authors)
(2017)
Development of a silicon bulk radiation damage model for Sentaurus TCAD.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 874.
pp. 94-102.
ISSN 0168-9002, 1872-9576
Abstract
This article presents a new bulk radiation damage model for p-type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151MeVneq∕cm2.
Item Type: | Article |
---|---|
Uncontrolled Keywords: | Silicon sensor, Silicon pixel detector, Radiation damage, TCAD, Device simulation |
Depositing User: | Symplectic Admin |
Date Deposited: | 11 Feb 2019 13:47 |
Last Modified: | 07 Dec 2024 08:52 |
DOI: | 10.1016/j.nima.2017.08.042 |
Open Access URL: | https://doi.org/10.1016/j.nima.2017.08.042 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3032651 |