Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM



Qi, YF, Zhao, CZ, Zhao, C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Yang, L, Shen, ZJ, He, JH and IEEE,
(2019) Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM. .

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Yanfei Qi et al-EUROSOI-ULIS 2019.pdf - Accepted Version

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Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: RRAM, Resistive Switching, Aluminum Oxide, Solution-processed, ALD
Depositing User: Symplectic Admin
Date Deposited: 20 Feb 2019 14:54
Last Modified: 02 Sep 2022 07:15
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3033102