Improved Resistive Switching Behavior in Solution-processed AlO<sub>x</sub> based RRAM



Qi, YF, Zhao, CZ, Zhao, C, Mitrovic, IZ, Xu, WY, Yang, L, Shen, ZJ and He, JH
(2019) Improved Resistive Switching Behavior in Solution-processed AlO<sub>x</sub> based RRAM. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019-4-1 - 2019-4-3, Grenoble, France.

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Abstract

In this study, a comprehensive comparison in light of the switching behavior has been made to the AlOxdielectrics in Resistive Random Access Memory (RRAM) devices, which were fabricated with solution-processed (SP) and atomic-layer-deposition (ALD) based techniques under the same temperature (250°C). The improved resistive switching properties such as smaller Vset/Vreset (1.21.8 V/-0.9-1.3 V), a narrower RHRs/RLRs distribution (280 k O/0.81 k O) and a higher resistance ratio (8230) under 5 mA compliance current (CC) have been achieved with SP method. The conduction mechanisms of the ON and OFF state for both devices are the ohmic conduction and Frenkel-Poole emission, respectively. Therefore, the solution-based fabrication method has the potential application for the flexible memory, due to the fabrication merits of the low-temperature, low cost, large area implementation and being environmental-friendly.

Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: RRAM, Resistive Switching, Aluminum Oxide, Solution-processed, ALD
Depositing User: Symplectic Admin
Date Deposited: 20 Feb 2019 14:54
Last Modified: 15 Jun 2024 01:41
DOI: 10.1109/eurosoi-ulis45800.2019.9041862
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3033102