Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature



Shen, ZJ, Zhao, C, Zhao, CZ, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Yang, L, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Luo, T, Huang, YB and IEEE,
(2019) Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. .

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IZM accepted-Zongjie Shen-EUROSOI-ULIS 2019.doc - Accepted Version

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Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: graphene oxide, solution-processed method, low fabrication temperature
Depositing User: Symplectic Admin
Date Deposited: 20 Feb 2019 14:54
Last Modified: 02 Sep 2022 09:24
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3033104