Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature

Shen, ZJ, Zhao, C, Zhao, CZ, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Yang, L, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Luo, T and Huang, YB (2019) Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019-4-1 - 2019-4-3, Grenoble, France.

Text IZM accepted-Zongjie Shen-EUROSOI-ULIS 2019.doc - Author Accepted Manuscript Download (2MB)

Abstract

In this work, the Al/GO/Si/Al RRAM device was fabricated with solution-processed graphene oxide (GO) thin film at low temperature (50 ?). A superior electrical performance and stable operation of the device has been achieved showing typical bipolar resistive switching characteristics with operation voltage lower than 3 V, retention property sustained over 104 s and endurance over 102 cycles. The results suggest that the solution-processed GO thin films exhibit great potential for use in the flexible device.

Item Type:	Conference or Workshop Item (Unspecified)
Uncontrolled Keywords:	graphene oxide, solution-processed method, low fabrication temperature
Depositing User:	Symplectic Admin
Date Deposited:	20 Feb 2019 14:54
Last Modified:	15 Mar 2024 03:07
DOI:	10.1109/eurosoi-ulis45800.2019.9041877
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3033104