Investigation of the electrical performance of hfo₂ dielectrics deposited on passivated germanium substrates

Lu, Q, Mu, Y, Zhao, Y, Zhao, CZ, Taylor, S ORCID: 0000-0002-2144-8459 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Investigation of the electrical performance of hfo₂ dielectrics deposited on passivated germanium substrates. .

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Abstract

Propanethiol solution (0.1 M) in 2-propanol, octanethiol solution (0.1 M) in 2-propanol and 20% (NH<inf>4</inf>)<inf>2</inf>S solution in water were used to passivate the germanium substrates. HfO<inf>2</inf> thin films of 150 ALD cycles were then deposited on the passivated germanium substrates. The morphology of the thin films was investigated by X-ray diffraction and it was found that the morphology of the thin films was not affected by the chemical treatments. A lower leakage current density was observed in the passivated samples compared with the witness one. In addition, the interface quality and long-time stress reliability of the passivated samples were improved when the samples were annealed in forming gas ambient.

Item Type:	Conference Item (Unspecified)
Uncontrolled Keywords:	40 Engineering, 4016 Materials Engineering, 34 Chemical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	04 Mar 2019 11:52
Last Modified:	17 Jun 2025 18:13
DOI:	10.1088/1757-899X/201/1/012029
Open Access URL:	http://doi.org/10.1088/1757-899X/201/1/012029
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3033741