Effect of HCl cleaning on InSb-Al2O3 MOS capacitors

Vavasour, Oliver J, Jefferies, Richard, Walker, Marc, Roberts, Joseph W, Meakin, Naomi R, Gammon, Peter M, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Ashley, Tim (2019) Effect of HCl cleaning on InSb-Al2O3 MOS capacitors. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (3). 035032-035032.

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Official URL: http://dx.doi.org/10.1088/1361-6641/ab0331

Abstract

<jats:title>Abstract</jats:title> <jats:p>In this work, the role of HCl treatments on InSb surfaces and InSb–Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> dielectric interfaces is characterised. X-ray photoelectron spectroscopy measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl<jats:sub>3</jats:sub> which is not present for similar HCl-water processes. Furthermore, this InCl<jats:sub>3</jats:sub> layer desorbs from the surface between 200 °C and 250 °C. Metal–oxide–semiconductor capacitors were fabricated using atomic layer deposition of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> at 200 °C and 250 °C and the presence of InCl<jats:sub>3</jats:sub> was associated with a +0.79 V flatband voltage shift. The desorption of the InCl<jats:sub>3</jats:sub> layer at 250 °C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (<jats:italic>D</jats:italic> <jats:sub>it</jats:sub>) and hysteresis voltage (<jats:italic>V</jats:italic> <jats:italic> <jats:sub>H</jats:sub> </jats:italic>). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.</jats:p>

Item Type:	Article
Uncontrolled Keywords:	InSb, III-V, HCl, ALD, Al2O3, MOSCAP
Depositing User:	Symplectic Admin
Date Deposited:	25 Mar 2019 10:09
Last Modified:	19 Jan 2023 00:56
DOI:	10.1088/1361-6641/ab0331
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3034855