Bias-stress stability and radiation response of solution-processed AlO<sub>x</sub> dielectrics investigated by on-site measurements



Fang, YX, Zhao, C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Yang, L and Zhao, CZ
(2019) Bias-stress stability and radiation response of solution-processed AlO<sub>x</sub> dielectrics investigated by on-site measurements. In: Insulating Films on Semiconductors, INFOS 2019, 2019-6-30 - 2019-7-3, Clare College, University of Cambridge, UK.

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Abstract

In this work, the effects of biased irradiation on solution-processed and atomic layer deposited (ALD) AlOx thin films MOS capacitors were investigated by an on-site technique. The devices were irradiated by a 662-KeV Cs137 γ-ray radiation source under different positive/negative gate biases. The radiation time was up to 105 s and the total dose was around 92 Gy. It has been found that radiation could result in reversibility of flat-band voltage shifts (ΔVFB) of solution-processed AlOx MOS capacitors, which were further analyzed through calculating the radiation induced oxide traps (ΔNot) in AlOx thin film and interface traps at AlOx/Si interface (ΔNit). Additionally, solution-processed AlOx MOS capacitors exhibit more radiation induced charges compared to those fabricated by ALD, which indicates that solution-processed AlOx thin films contain abundant precursor impurities and bonded oxygen.

Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: Solution-processed, High-k gate dielectric, AlOx, Biased gamma-ray radiation stress stability
Depositing User: Symplectic Admin
Date Deposited: 25 Mar 2019 14:21
Last Modified: 18 Oct 2023 03:33
DOI: 10.1016/j.mee.2019.111113
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3034880