Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions



Cosham, Samuel D, Richards, Stephen P, Manning, Troy ORCID: 0000-0002-7624-4306, Hill, Michael S, Johnson, Andrew L and Molloy, Kieran C
(2017) Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions. EUROPEAN JOURNAL OF INORGANIC CHEMISTRY (13). 1868 - 1876.

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Item Type: Article
Uncontrolled Keywords: Chemical vapor deposition, Nickel, Precursors, Semiconductors, Thin films
Depositing User: Symplectic Admin
Date Deposited: 08 Apr 2019 15:06
Last Modified: 18 Aug 2022 13:10
DOI: 10.1002/ejic.201601419
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3036200