Modelling radiation damage to pixel sensors in the ATLAS detector

Aaboud, M, Aad, G, Abbott, B, Abbott, DC, Abdinov, O, Abhayasinghe, DK, Abidi, SH, AbouZeid, OS, Abraham, NL, Abramowicz, H
et al (show 2870 more authors) (2019) Modelling radiation damage to pixel sensors in the ATLAS detector. JOURNAL OF INSTRUMENTATION, 14 (06). P06012-.

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Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of $10^{15}$ 1 MeV ${n}_{eq}/{cm}^2$, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 ($\leq 10^{15}$ 1 MeV ${n}_{eq}/{cm}^2$).

Item Type: Article
Additional Information: 57 pages in total, author list starting page 41, 22 figures, 7 tables, published in Journal of Instrumentation. All figures including auxiliary figures are available at
Uncontrolled Keywords: Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Radiation-hard detectors, Solid state detectors
Depositing User: Symplectic Admin
Date Deposited: 15 Jul 2019 07:50
Last Modified: 19 Jan 2023 00:37
DOI: 10.1088/1748-0221/14/06/P06012
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