Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric



Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Zhao, Cezhou, Hall, Steve ORCID: 0000-0001-8387-1036, Yang, Li, Luo, Tian, Huang, Yanbo and Zhao, Chun
(2019) Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric. MICROMACHINES, 10 (7).

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Item Type: Article
Uncontrolled Keywords: bipolar resistive switching characteristics, annealing temperatures, solution-based dielectric, resistive random access memory (RRAM)
Depositing User: Symplectic Admin
Date Deposited: 05 Aug 2019 14:34
Last Modified: 02 Sep 2022 09:29
DOI: 10.3390/mi10070446
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3050206

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