Comparison of atomic layer deposited Al2O3 and (Ta2O5)(0.12)(Al2O3)(0.88) gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors



Partida-Manzanera, T, Zaidi, ZH, Roberts, JW, Dolmanan, SB, Lee, KB, Houston, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Tripathy, S and Potter, RJ ORCID: 0000-0003-0896-4536
(2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)(0.12)(Al2O3)(0.88) gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126 (3).

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Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 25 Jul 2019 15:33
Last Modified: 09 Jan 2021 03:23
DOI: 10.1063/1.5049220
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3050336