Interstitial Oxide Ion Conductivity in the Langasite Structure: Carrier Trapping by Formation of (Ga,Ge)2O8 Units in La3Ga5–xGe1+xO14+x/2 (0 < x ≤ 1.5)



Rosseinsky, MJ ORCID: 0000-0002-1910-2483
(2019) Interstitial Oxide Ion Conductivity in the Langasite Structure: Carrier Trapping by Formation of (Ga,Ge)2O8 Units in La3Ga5–xGe1+xO14+x/2 (0 < x ≤ 1.5). Chemistry of Materials.

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Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 29 Jul 2019 13:57
Last Modified: 15 May 2020 15:10
DOI: 10.1021/acs.chemmater.9b01734
Open Access URL: https://doi.org/10.1021/acs.chemmater.9b01734
URI: http://livrepository.liverpool.ac.uk/id/eprint/3050555