Roberts, JW, Chalker, PR ORCID: 0000-0002-2295-6332, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH
ORCID: 0000-0002-4654-3882, Dhanak, VR, Phillips, LJ
ORCID: 0000-0001-5181-1565, Major, JD
ORCID: 0000-0002-5554-1985 and Massabuau, FC-P
(2019)
Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition.
JOURNAL OF CRYSTAL GROWTH, 528.
Text
1908.06914v1.pdf - Submitted Version Download (1MB) | Preview |
Item Type: | Article |
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Uncontrolled Keywords: | Characterization, Crystal structure, Crystal morphology, X-ray diffraction, Atomic layer epitaxy, Gallium compounds |
Depositing User: | Symplectic Admin |
Date Deposited: | 28 Aug 2019 15:31 |
Last Modified: | 09 Jan 2021 03:13 |
DOI: | 10.1016/j.jcrysgro.2019.125254 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3052627 |
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