Roberts, JW, Chalker, PR 
ORCID: 0000-0002-2295-6332, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH ORCID: 0000-0002-4654-3882, Dhanak, VR, Phillips, LJ ORCID: 0000-0001-5181-1565, Major, JD ORCID: 0000-0002-5554-1985 and Massabuau, FC-P
(2019)
Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition.
JOURNAL OF CRYSTAL GROWTH, 528.
p. 125254.
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1908.06914v1.pdf - Submitted version Download (1MB) | Preview |
Abstract
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga2O3 films were investigated. The deposition temperature was found to have a significant effect on the film crystallinity. At temperatures below 200{\deg}C amorphous Ga2O3 films were deposited. Between 250{\deg}C and 350{\deg}C the films became predominantly {\alpha}-Ga2O3. Above 350{\deg}C the deposited films showed a mixture of {\alpha}-Ga2O3 and {\epsilon}-Ga2O3 phases. Plasma power and O2 flow rate were observed to have less influence over the resultant phases present in the films. However, both parameters could be tuned to alter the strain of the film. Ultraviolet transmittance measurements on the Ga2O3 films showed that the bandgaps ranges from 5.0 eV to 5.2 eV with the largest bandgap of 5.2 eV occurring for the {\alpha}-Ga2O3 phase deposited at 250{\deg}C.
| Item Type: | Article |
|---|---|
| Additional Information: | 11 pages, 7 figures, 1 table |
| Uncontrolled Keywords: | Characterization, Crystal structure, Crystal morphology, X-ray diffraction, Atomic layer epitaxy, Gallium compounds |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 28 Aug 2019 15:31 |
| Last Modified: | 19 Jan 2023 00:28 |
| DOI: | 10.1016/j.jcrysgro.2019.125254 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3052627 |
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