Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition


Roberts, JW, Chalker, PR ORCID: 0000-0002-2295-6332, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH ORCID: 0000-0002-4654-3882, Dhanak, VR, Phillips, LJ ORCID: 0000-0001-5181-1565, Major, JD ORCID: 0000-0002-5554-1985 and Massabuau, FC-P (2019) Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. JOURNAL OF CRYSTAL GROWTH, 528.

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Item Type: Article
Uncontrolled Keywords: Characterization, Crystal structure, Crystal morphology, X-ray diffraction, Atomic layer epitaxy, Gallium compounds
Depositing User: Symplectic Admin
Date Deposited: 28 Aug 2019 15:31
Last Modified: 09 Jan 2021 03:13
DOI: 10.1016/j.jcrysgro.2019.125254
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3052627
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