Band alignments of sputtered dielectrics on GaN


Supardan, SN, Das, P ORCID: 0000-0003-1147-6541, Major, JD ORCID: 0000-0002-5554-1985, Hannah, A, Zaidi, ZH, Mahapatra, R, Lee, KB, Valizadeh, R, Houston, PA, Hall, S ORCID: 0000-0001-8387-1036 et al (show 2 more authors) (2020) Band alignments of sputtered dielectrics on GaN JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (7). 075303-075303. ISSN 0022-3727, 1361-6463

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Abstract

Abstract The band alignments of sputtered ZrO 2 , Al 2 O 3 and MgO on GaN have been measured experimentally using x-ray photoelectron spectroscopy (XPS). The valence band offsets (±0.2 eV) for ZrO 2 , Al 2 O 3 and MgO on GaN using Kraut’s method and charge-corrected XPS core levels were found to be 0.4 eV, 1.1 eV and 1.2 eV with corresponding conduction band offsets (±0.2 eV) of 1.3 eV, 2.0 eV and 2.8 eV, respectively. The electrical characterization of metal insulator semiconductor (MIS)-capacitors with different gate dielectrics (ZrO 2 , Al 2 O 3 and MgO) has been performed as well. The current density of the MIS-capacitors with gate dielectrics MgO and Al 2 O 3 at a positive bias of 1 V show lower leakage currents of 3.2  ×  10 −6 A cm −2 and 5.3  ×  10 −6 A cm −2 respectively, whereas, the MIS-capacitors with ZrO 2 gate dielectric have the highest leakage current of 6.2  ×  10 −4 A cm −2 at 1 V.

Item Type: Article
Uncontrolled Keywords: gallium nitride, high-k dielectrics, x-ray photoelectron spectroscopy, band offsets, Kraut's method, metal-insulator-semiconductor capacitor
Depositing User: Symplectic Admin
Date Deposited: 27 Nov 2019 11:03
Last Modified: 19 Dec 2025 16:42
DOI: 10.1088/1361-6463/ab5995
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3063684
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