Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature



Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Yang, L, He, JH, Luo, T, Huang, YB
et al (show 1 more authors) (2020) Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature. SOLID-STATE ELECTRONICS, 168.

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Item Type: Article
Uncontrolled Keywords: Resistive switching, Aluminum oxide, Graphene oxide, Solution-processed
Depositing User: Symplectic Admin
Date Deposited: 10 Feb 2020 10:23
Last Modified: 02 Sep 2022 09:35
DOI: 10.1016/j.sse.2019.107735
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3074362