Resistive switching behavior of solution-processed AlO<sub>x</sub> and GO based RRAM at low temperature



Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Yang, L, He, JH, Luo, T, Huang, YB
et al (show 1 more authors) (2020) Resistive switching behavior of solution-processed AlO<sub>x</sub> and GO based RRAM at low temperature. SOLID-STATE ELECTRONICS, 168. p. 107735.

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Abstract

This paper reports on resistive switching behavior observed in resistive random access memory (RRAM) devices fabricated with aluminum oxide (AlOx) and graphene oxide (GO) dielectric films, which were solution-processed under low annealing temperatures of 250 °C and 50 °C for AlOx and GO dielectric films, respectively. As representative of metal oxide and two-dimensional material, a detailed study and comprehensive comparison in view of resistive switching performance has been conducted for AlOx and GO based RRAM, including operation voltage, resistance distribution, resistance ratio, conduction mechanism and retention/endurance property. A smaller operation voltage and better stability were demonstrated in AlOx based RRAM devices while higher resistance magnitude of high resistance state (HRS) and resistance ratio were observed in GO based RRAM devices. The current study opens up promising applications of environmental-friendly solution-processed AlOx and GO films with lower energy consumption for non-volatile memory (NVM).

Item Type: Article
Uncontrolled Keywords: Resistive switching, Aluminum oxide, Graphene oxide, Solution-processed
Depositing User: Symplectic Admin
Date Deposited: 10 Feb 2020 10:23
Last Modified: 06 Oct 2023 22:12
DOI: 10.1016/j.sse.2019.107735
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3074362