Belmeguenai, M, Roussigne, Y, Bouloussa, H, Cherif, SM, Stashkevich, A, Nasui, M, Gabor, MS, Mora-Hernandez, A, Nicholson, B, Inyang, O-O et al (show 2 more authors)
(2018)
Thickness Dependence of the Dzyaloshinskii-Moriya Interaction in Co<sub>2</sub>FeAl Ultrathin Films: Effects of Annealing Temperature and Heavy-Metal Material.
PHYSICAL REVIEW APPLIED, 9 (4).
044044-.
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Abstract
Interfacial Dzyaloshinskii-Moriya interaction (iDMI) has been investigated in Co2FeAl (CFA) ultrathin films of various thicknesses (0.8 nm<tCFA<2 nm) grown on Si substrates, using Pt, W, Ir and MgO buffer or/and capping layers. Vibrating sample magnetometry revealed that magnetization at saturation (Ms) for the Pt and Ir buffered films is higher than the usual Ms of CFA due to the proximity induced magnetization (PIM) in Ir and Pt, estimated to be 19% and 27%, respectively. The presence of PIM in these materials is confirmed using x-ray resonant magnetic reflectivity. Moreover, while no PIM is induced in W, higher PIM is obtained with Pt when it is used as buffer layer rather than capping layer. Brillouin light scattering (BLS) in the Damon-Eshbach geometry has been used to investigate iDMI constants and the perpendicular anisotropy field versus the annealing temperature. The DMI sign has been found to be negative for Pt/CFA and Ir/CFA while it is positive for W/CFA. The thickness dependence of the effective iDMI constant for stacks involving Pt and W shows the existence of two regimes similarly to that of the perpendicular anisotropy constant due to the degradation of the interfaces as the CFA thickness approaches the nanometer. The surface iDMI and anisotropy constants of each stack have been determined for the thickest samples where a linear thickness dependence of the effective iDMI constant and the effective magnetization has been observed. The interface anisotropy and iDMI constants, investigated for Pt/CFA/MgO system, showed different trends with the annealing temperature. The decrease of iDMI constant with increasing annealing temperature is probably due to the electronic structure changes at the interfaces, while the increase of the interface anisotropy constant is coherent the interface quality and disorder enhancement.
| Item Type: | Article |
|---|---|
| Additional Information: | 8 figures |
| Uncontrolled Keywords: | cond-mat.mtrl-sci, cond-mat.mtrl-sci |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 21 Feb 2020 11:13 |
| Last Modified: | 13 Oct 2023 19:14 |
| DOI: | 10.1103/PhysRevApplied.9.044044 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3075761 |
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