alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire



Roberts, JW, Jarman, JC, Johnstone, DN, Midgley, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Oliver, RA and Massabuau, FC-P
(2018) alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire. JOURNAL OF CRYSTAL GROWTH, 487. 23 - 27.

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Item Type: Article
Uncontrolled Keywords: Semiconducting gallium compounds, Oxides, Atomic layer epitaxy, X-ray diffraction, Scanning electron diffraction
Depositing User: Symplectic Admin
Date Deposited: 21 Feb 2020 13:54
Last Modified: 21 Jan 2021 12:13
DOI: 10.1016/j.jcrysgro.2018.02.014
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3076041