Roberts, JW, Jarman, JC, Johnstone, DN, Midgley, PA, Chalker, PR 
ORCID: 0000-0002-2295-6332, Oliver, RA and Massabuau, FC-P
(2018)
alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire.
JOURNAL OF CRYSTAL GROWTH, 487.
23 - 27.
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Text
Roberts_etal_JCG_2018_low_temperature_atomic_layer_deposition_on_sapphire.pdf - Accepted Version Download (865kB) | Preview |
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Semiconducting gallium compounds, Oxides, Atomic layer epitaxy, X-ray diffraction, Scanning electron diffraction |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 21 Feb 2020 13:54 |
| Last Modified: | 21 Jan 2021 12:13 |
| DOI: | 10.1016/j.jcrysgro.2018.02.014 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3076041 |
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