Roberts, JW, Jarman, JC, Johnstone, DN, Midgley, PA, Chalker, PR 
ORCID: 0000-0002-2295-6332, Oliver, RA and Massabuau, FC-P
(2018)
alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire.
JOURNAL OF CRYSTAL GROWTH, 487.
pp. 23-27.
ISSN 0022-0248, 1873-5002
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Roberts_etal_JCG_2018_low_temperature_atomic_layer_deposition_on_sapphire.pdf - Author Accepted Manuscript Download (865kB) | Preview |
Abstract
α-Ga<inf>2</inf>O<inf>3</inf> is a metastable phase of Ga<inf>2</inf>O<inf>3</inf> of interest for wide bandgap engineering since it is isostructural with α-In<inf>2</inf>O<inf>3</inf> and α-Al<inf>2</inf>O<inf>3</inf>. α-Ga<inf>2</inf>O<inf>3</inf> is generally synthesised under high pressure (several GPa) or relatively high temperature (∼500 °C). In this study, we report the growth of α-Ga<inf>2</inf>O<inf>3</inf> by low temperature atomic layer deposition (ALD) on sapphire substrate. The film was grown at a rate of 0.48 Å/cycle, and predominantly consists of α-Ga<inf>2</inf>O<inf>3</inf> in the form of (0001)-oriented columns originating from the interface with the substrate. Some inclusions were also present, typically at the tips of the α phase columns and most likely comprising ε-Ga<inf>2</inf>O<inf>3</inf>. The remainder of the Ga<inf>2</inf>O<inf>3</inf> film – i.e. nearer the surface and between the α-Ga<inf>2</inf>O<inf>3</inf> columns, was amorphous. The film was found to be highly resistive, as is expected for undoped material. This study demonstrates that α-Ga<inf>2</inf>O<inf>3</inf> films can be grown by low temperature ALD and suggests the possibility of a new range of ultraviolet optoelectronic and power devices grown by ALD. The study also shows that scanning electron diffraction is a powerful technique to identify the different polymorphs of Ga<inf>2</inf>O<inf>3</inf> present in multiphase samples.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Semiconducting gallium compounds, Oxides, Atomic layer epitaxy, X-ray diffraction, Scanning electron diffraction |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 21 Feb 2020 13:54 |
| Last Modified: | 17 Jun 2025 07:26 |
| DOI: | 10.1016/j.jcrysgro.2018.02.014 |
| Related Websites: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3076041 |
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