Wang, Haoran, Li, Chung-Hsin, Liu, Yeke, Joseph, Sumin D 
ORCID: 0000-0001-9756-7596, Huang, Yi ORCID: 0000-0001-7774-1024 and Hsu, Shawn SH
(2020)
Low turn-on voltage and high breakdown GaN Schottky barrier diodes for RF energy harvesting applications.
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Low Turn-on Voltage and High Breakdown GaN Schottky Barrier Diodes for RF Energy Harvesting Applications.pdf - Author Accepted Manuscript Download (407kB) | Preview |
Abstract
This work presents the design, fabrication, and analysis of GaN Schottky barrier diodes with multi-finger structure on the silicon substrate using various layout parameters, aiming for RF energy harvesting applications. The measured results demonstrate a low turn-on voltage (V on) and a high breakdown voltage (V BK) of 0.56 V and 47 V, respectively. A high cut-off frequency (f c) of 360.9 GHz under reverse bias of -10 V is also obtained for a two-finger device with each finger of W = 12.5 μm and L = 0.2 μm.
| Item Type: | Conference or Workshop Item (Unspecified) |
|---|---|
| Depositing User: | Symplectic Admin |
| Date Deposited: | 20 Jul 2020 07:49 |
| Last Modified: | 18 Jan 2023 23:55 |
| DOI: | 10.35848/1347-4065/ab6e09 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3082474 |
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