Direct Silicon Heterostructures with Methylammonium Lead Iodide Perovskite for Photovoltaic Applications

Mariotti, S ORCID: 0000-0002-7163-9480, Turkestani, MA, Hutter, OS ORCID: 0000-0002-8838-8956, Papageorgiou, G, Major, JD ORCID: 0000-0002-5554-1985, Swallow, J, Nayak, PK ORCID: 0000-0002-7845-5318, Snaith, HJ, Dhanak, VR ORCID: 0000-0001-8053-654X and Durose, K ORCID: 0000-0003-1183-3211 (2020) Direct Silicon Heterostructures with Methylammonium Lead Iodide Perovskite for Photovoltaic Applications IEEE Journal of Photovoltaics, 10 (4). pp. 945-951. ISSN 2156-3381, 2156-3403

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Abstract

We investigated the formation of photovoltaic (PV) devices using direct n-Si/MAPI (methylammonium lead tri-iodide) two-sided heterojunctions for the first time (as a possible alternative to two-terminal tandem devices) in which charge might be generated and collected from both the Si and MAPI. Test structures were used to establish that the n-Si/MAPI junction was photoactive and that spiro-OMeTAD acted as a 'pinhole blocking' layer in n-Si/MAPI devices. Two-terminal 'substrate' geometry devices comprising Al/n-Si/MAPI/spiro-OMeTAD/Au were fabricated and the effects of changing the thickness of the semitransparent gold electrode and the silicon resistivity were investigated. External quantum efficiency and capacitance-voltage measurements determined that the junction was one-sided in the silicon - and that the majority of the photocurrent was generated in the silicon, with there being a sharp cutoff in photoresponse above the MAPI bandgap. Construction of band diagrams indicated the presence of an upward valence band spike of up to 0.5 eV at the n-Si/MAPI interface that could impede carrier flow. Evidence for hole accumulation at this feature was seen in both Kelvin-probe transients and from unusual features in both current-voltage and capacitance-voltage measurements. The devices achieved a hysteresis-free best power conversion efficiency of 2.08%, VOC 0.46 V, JSC 11.77 mA/cm2, and FF 38.4%, demonstrating for the first time that it is possible to create a heterojunction PV device directly between the MAPI and n-Si. Further prospects for two-sided n-Si/MAPI heterojunctions are also discussed.

Item Type:	Article
Additional Information:	No legal or ethical issues - this data may be made freely available
Uncontrolled Keywords:	Silicon, Gold, Lead, Heterojunctions, Photovoltaic systems, Heterojunctions, heterostructures, MAPI, silicon methylammonium lead iodide, methylammonium lead tri-iodide (MAPI), silicon
Depositing User:	Symplectic Admin
Date Deposited:	24 Apr 2020 14:47
Last Modified:	24 Jan 2026 02:30
DOI:	10.1109/JPHOTOV.2020.2981805
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3084313
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