Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric



Cai, Yutao, Liu, Wen, Cui, Miao, Sun, Ruize, Liang, Yung C, Wen, Huiqing, Yang, Li, Supardan, Siti N, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459
et al (show 2 more authors) (2020) Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric. JAPANESE JOURNAL OF APPLIED PHYSICS, 59 (4).

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Cai et al-Jap J of ApplPhys-2020.pdf - Accepted Version
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Item Type: Article
Uncontrolled Keywords: GaN, MIS-HEMTs, surface treatment
Depositing User: Symplectic Admin
Date Deposited: 03 Jun 2020 09:00
Last Modified: 09 Jan 2021 09:48
DOI: 10.35848/1347-4065/ab7863
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3089315