Cai, Yutao, Liu, Wen, Cui, Miao, Sun, Ruize, Liang, Yung C, Wen, Huiqing, Yang, Li, Supardan, Siti N, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen
ORCID: 0000-0002-2144-8459 et al (show 2 more authors)
(2020)
Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric.
JAPANESE JOURNAL OF APPLIED PHYSICS, 59 (4).
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Cai et al-Jap J of ApplPhys-2020.pdf - Accepted Version Download (1MB) | Preview |
Item Type: | Article |
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Uncontrolled Keywords: | GaN, MIS-HEMTs, surface treatment |
Depositing User: | Symplectic Admin |
Date Deposited: | 03 Jun 2020 09:00 |
Last Modified: | 20 May 2022 07:29 |
DOI: | 10.35848/1347-4065/ab7863 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3089315 |
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