(Invited) Band Line-up of High-k Oxides on GaN



Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Das, Partha ORCID: 0000-0003-1147-6541, Jones, Leanne, Gibbon, James, Dhanak, Vinod R, Mahapatra, Rajat, Partida Manzanera, Teresa ORCID: 0000-0002-2834-6340, Roberts, Joseph W, Potter, Richard J ORCID: 0000-0003-0896-4536, Chalker, Paul R ORCID: 0000-0002-2295-6332
et al (show 2 more authors) (2020) (Invited) Band Line-up of High-k Oxides on GaN. ECS Transactions, 97 (1). 67 - 81.

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Abstract

<jats:p>We present comprehensive experimental work on Ti<jats:sub>x</jats:sub>Al<jats:sub>1-x</jats:sub>O<jats:sub>y</jats:sub> (with x = 9%, 16%, 25%, 36%, 100%) and Ga<jats:sub>x</jats:sub>Al<jats:sub>1-x</jats:sub>O<jats:sub>y</jats:sub> (x = 5%, 20%, 80% and 95%) fabricated using atomic layer deposition with the aim of achieving favorable band alignment with GaN for device applications. The permittivity, k, has been found to be enhanced from ~10 for 9% Ti to 76 for TiO<jats:sub>2</jats:sub>, but brings unfavorable band line-up and a small conduction band offset (&lt; 0.1 eV) with GaN for all Ti% studied. On the other hand, Ga<jats:sub>x</jats:sub>Al<jats:sub>1-x</jats:sub>O<jats:sub>y</jats:sub> (x = 5%, 20%) films show substantial increase of the band gap from 4.5 eV for Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> to 5.5 eV for x = 5% Ga and 6.0 eV for x = 20% Ga in mixed oxides and a strong suppression of leakage current in associated metal insulator semiconductor (MIS) capacitors.</jats:p>

Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 03 Jun 2020 08:00
Last Modified: 01 Sep 2022 08:27
DOI: 10.1149/09701.0067ecst
URI: https://livrepository.liverpool.ac.uk/id/eprint/3089354