Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting

Tekin, SB, Das, P, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Werner, M, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2020) Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting. In: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020-9-1 - 2020-9-30, Caen, Normandy, France.

Text Tekin et al-Proc EUROSOI-2020.pdf - Author Accepted Manuscript Download (525kB) | Preview

Abstract

Metal Insulator Metal (MIM) and MI3M rectifiers have been fabricated by atomic layer deposition (ALD) to investigate the insulator (Al2O3, Ta2O5, Nb2O5) layer quality and rectification performance for inclusion in rectenna arrays for infrared energy harvesting. ALD has provided superior control of nanometre film thickness (1 to 3 nm) as well as insulator film quality as tunnelling has been found to be the dominant conduction mechanism for all fabricated devices. The Ti/Al2O3/Au diode exhibits zero bias responsivity of -0.6 A/W, showing that it can be used for energy harvesting applications without the aid of external bias. Engineering tunnel barriers in non-cascaded (Ta2O5/Nb2O5/Al2O3) and cascaded (Nb2O5/Ta2O5/Al2O3) triple insulator configurations, has been found to shift the onset of rectification reversal from 0.35 V to 1.1 V. A superior low-voltage asymmetry of 6 at 0.1 V and responsivity of 4.3 A/W at 0.35 V are demonstrated for the MI3M diode in non-cascaded configuration.

Item Type:	Conference or Workshop Item (Unspecified)
Uncontrolled Keywords:	MIM, rectenna, rectification, ALD, dielectrics
Depositing User:	Symplectic Admin
Date Deposited:	09 Jul 2020 08:46
Last Modified:	18 Jan 2023 23:49
DOI:	10.1109/EUROSOI-ULIS49407.2020.9365388
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3090541