Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN



Das, Partha ORCID: 0000-0003-1147-6541, Jones, Leanne AH, Gibbon, James T, Dhanak, Vinod R, Partida-Manzanera, Teresa, Roberts, Joseph W, Potter, Richard ORCID: 0000-0003-0896-4536, Chalker, Paul R ORCID: 0000-0002-2295-6332, Cho, Sung-Jin, Thayne, Iain G
et al (show 2 more authors) (2020) Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9 (6).

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Item Type: Article
Uncontrolled Keywords: GaN, Dielectrics, High-k, Atomic layer deposition, X-ray photoelectron spectroscopy, Band offsets, Kraut method, Metal insulator semiconductor capacitor
Depositing User: Symplectic Admin
Date Deposited: 23 Jul 2020 08:03
Last Modified: 09 Jan 2021 01:48
DOI: 10.1149/2162-8777/aba4f4
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3094937