Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application



Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Xu, Wangying, Liu, Yina, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li and Zhao, Cezhou
(2020) Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application. NANOMATERIALS, 10 (8).

[img] Text
Nanomaterials-Zongie et al-final accepted version.docx - Accepted Version

Download (5MB)
Item Type: Article
Uncontrolled Keywords: artificial intelligence, thin film, 2D materials, switching mechanisms, bionic synaptic application, RRAM
Depositing User: Symplectic Admin
Date Deposited: 24 Jul 2020 07:55
Last Modified: 13 Sep 2022 04:10
DOI: 10.3390/nano10081437
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3095009